Assessment of interface state density in silicon metal‐oxide‐semiconductor transistors at room, liquid‐nitrogen, and liquid‐helium temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345572
Reference9 articles.
1. Characterization of the Mosfet Operating in Weak Inversion
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation
4. Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism
5. Modelling of ohmic MOSFET operation at very low temperature
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