Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Author:

Gu JieORCID,Zhang QingzhuORCID,Wu ZhenhuaORCID,Yao Jiaxin,Zhang Zhaohao,Zhu Xiaohui,Wang GuileiORCID,Li JunjieORCID,Zhang Yongkui,Cai Yuwei,Xu Renren,Xu GaoboORCID,Xu Qiuxia,Yin HuaxiangORCID,Luo JunORCID,Wang Wenwu,Ye Tianchun

Abstract

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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