Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding

Author:

Rossel C.,Weigele P.,Czornomaz L.,Daix N.,Caimi D.,Sousa M.,Fompeyrine J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Strain effects in semiconductors;Sun,2010

2. Experimental study of 〈110〉 uniaxial stress effects on p-channel GaAs quantum-well FETs;Xia;IEEE Trans Electron Dev,2011

3. Study of piezoresistance under uniaxial stress for technologically relevant III–V semiconductors using wafer bending experiments;Nainani;Appl Phys Lett,2010

4. Strain additivity in III–V channels for CMOSFETs beyond 22nm technology node;Suthram;VLSI Technol Dig,2008

5. Chin HC, Gong X, Liu X, Lin Z, Yeo Y-C. Strained n-MOSFETs: performance boost with in situ doped lattice-mismatched source/drain stressors and interface engineering. Digest 2009 VLSI Tech. Sym, 244–45.

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