Abstract
Abstract
In this paper, with the help of a well-calibrated simulation study, we explore the design space of ultra-thin body In1−x
Ga
x
As-on-Insulator MOS transistor. We have studied the effect of Indium content, and channel thickness on carrier mobility, different analog figure of merits such as transconductance, transconductance generation factor, output conductance, and intrinsic gain of UTB III–V on Insulator MOS transistor. Moreover, we have analyzed the RF performance of the device in terms of unity gain cut-off frequency and maximum oscillation frequency. To verify frequency response characteristics and DC transfer characteristics, the circuit implementation of the UTB III–V on Insulator MOS transistor was performed on a cascode amplifier and differential amplifier. Our result shows that while increasing channel thickness and Indium content, the carrier transport property of the device improves. With an increase in channel thickness and Indium content, a significant improvement in carrier mobility is observed. Due to the poor electrostatic integrity, off-state current of the device increases with channel thickness and Indium content. Due to enhanced transport property, drain current, transconductance, unity gain cut-off frequency, and maximum oscillation frequency also improve. The improvement in analog and RF figure of Merits are also reflected in circuit performance.