Effects of BOX engineering on analogue/RF and circuit performance of InGaAs-OI-Si MOSFET
Author:
Affiliation:
1. School of Electronics Engineering, KIIT University, Bhubaneswar, India
2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata, India
Funder
Department of Electronics and Information Technology, Govt. of India
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00207217.2017.1312715
Reference34 articles.
1. Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers
2. Recombination lifetime of In0.53Ga0.47As as a function of doping density
3. Quantum correction to the equation of state of an electron gas in a semiconductor
4. Macroscopic physics of the silicon inversion layer
5. In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications
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