Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO-Reference-Cited by-同舟云学术

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Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

Published:2010-07 Issue:7 Volume:54 Page:732-735
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lu Y.F.,Ye Z.Z.,Zeng Y.J.,Zhu L.P.,Huang J.Y.,Zhao B.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Recent progress in processing and properties of ZnO;Pearton;Prog Mater Sci,2005

2. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy;Look;Appl Phys Lett,2002

3. Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy;Rommeluere;Appl Phys Lett,2003

4. Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source;Xu;J Cryst Growth,2004

5. p-Type conduction in N–Al co-doped ZnO thin films;Lu;Appl Phys Lett,2004

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1. Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode;Advanced Materials Technologies;2023-06-26

2. The Effect of Si Nanocrystalline Emitter Embedded in Crystalline Si Solar Cell;Journal of Nanoscience and Nanotechnology;2016-11-01

3. Structural Properties of P-Type ZnO Thin Film Post-Treated by NH₃ Plasma Method;Advanced Materials Research;2014-08

4. Na to tailor the band gap and morphology of ZnO nanograins;Journal of Materials Science: Materials in Electronics;2013-10-26

5. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors;International Journal of Photoenergy;2013

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