Affiliation:
1. Changchun Institute of Technology
2. Chinese Academy of Sciences
Abstract
In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×1016. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.
Publisher
Trans Tech Publications, Ltd.