Mobility extraction in SOI MOSFETs with sub 1nm body thickness

Author:

Schmidt M.,Lemme M.C.,Gottlob H.D.B.,Driussi F.,Selmi L.,Kurz H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. A highly threshold voltage-controllable 4T FinFET with an 8.5-nm-thick Si-Fin channel;Liu;IEEE Electron Dev Lett,2004

2. Sub-60-nm quasi-planar FinFETs fabricated using a simplified process;Lindert;IEEE Electron Dev Lett,2001

3. Subthreshold behavior of triple-gate MOSFETs on SOI material;Lemme;Solid-State Electron,2004

4. Doris B, et al. Extreme Scaling with Ultra-Thin Si Channel MOSFETs, In: IEDM Tech Dig; 2002. p. 267-270.

5. Ultrathin-body SOI MOSFET for deep-sub-tenth micron era;Choi;IEEE Electron Dev Lett,2000

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