Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM-Reference-Cited by-同舟云学术

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Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

Published:2018-02 Issue: Volume:140 Page:69-73
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Seo Youngsoo,Kim Shinkeun,Ko Kyul,Woo Changbeom,Kim Minsoo,Lee Jangkyu,Kang Myounggon,Shin Hyungcheol

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Nanowire-based one-dimensional electronics;Thelander;Mater Today,2006

2. CMOS scaling into the nanometer regime;Taur;Proc IEEE,1997

3. Considerations for ultimate CMOS scaling;Kuhn;IEEE Trans Electron Dev,2012

4. Mohata DK et al. Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300 mV logic applications. IEEE IEDM Tech Dig; 2011.

5. Technology/system codesign and benchmarking for lateral and vertical GAA nanowire FETs at 5-nm technology node;Pan;IEEE TED,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Alpha Particle Effect on Multi-Nanosheet Tunneling Field-Effect Transistor at 3-nm Technology Node;Micromachines;2019-12-04

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