1. Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps;Nagumo;Proc Int Electron Dev Meet,2010
2. Kumar SV, Kim KH, Sapatnekar SS. Impact of NBTI on SRAM read stability and design for reliability. In: Proc 7th Int Symp Quality Electron Des; 2006. p. 210–8.
3. Comprehensive SRAM design methodology for RTN reliability;Takeuchi;VLSI Symp Technol Dig,2011
4. The paradigm shift in understanding the bias temperature instability: from reaction diffusion to switching oxide traps;Grasser;IEEE Trans Electron Devices,2011
5. A comprehensive model of PMOS NBTI degradation;Alam;J Microelectron Reliab,2005