Modeling and simulation of the charge trapping component of BTI and RTS-Reference-Cited by-同舟云学术

Modeling and simulation of the charge trapping component of BTI and RTS

Published:2018-01 Issue: Volume:80 Page:278-283
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Both Thiago Hanna,Firpo Furtado Gabriela^ORCID,Wirth Gilson Inacio^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Stochastic charge trapping in oxides: from random telegraph noise to bias temperature instabilities;Grasser;Microelectron. Reliab.,2012

2. Statistical model for MOSFET bias temperature instability component due to charge trapping;Wirth;IEEE Trans. Electron Devices,2011

3. A unified perspective of RTN and BTI;Grasser,2014

4. The Capture/Emission Time Map Approach to the Bias Temperature Instability;Grasser,2014

5. 1/f noise and germanium surface properties;McWhorter;Semicond. Surf. Phys.,1957

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