Random telegraph noise in 2D hexagonal boron nitride dielectric films-Reference-Cited by-同舟云学术

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Random telegraph noise in 2D hexagonal boron nitride dielectric films

Published:2018-03-26 Issue:13 Volume:112 Page:133505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ranjan A.¹²^ORCID,Puglisi F. M.³,Raghavan N.¹,O'Shea S. J.²,Shubhakar K.¹,Pavan P.³^ORCID,Padovani A.⁴^ORCID,Larcher L.⁵,Pey K. L.¹^ORCID

Affiliation:

1. Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372

2. Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore 138634

3. DIEF–Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 42125 Italy

4. MDLsoft Inc., 5201 Great America Parkway, Suite 320, Santa Clara, California 95054, USA

5. DISMI–Università di Modena e Reggio Emilia, Via Amendola 2, Reggio Emilia 42122, Italy

Funder

Singapore University of Technology and Design

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022040

Reference34 articles.

1. Graphene for flexible and wearable device applications

2. Graphene transistors

3. Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices

4. Graphene electronic sensors – review of recent developments and future challenges

5. Exceptional ballistic transport in epitaxial graphene nanoribbons

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