Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications

Author:

Hwang E.,Mookerjea S.,Hudait M.K.,Datta S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Benchmarking nanotechnology for high-performance and low-power logic transistor applications;Chau;IEEE Trans Nanotechnol,2005

2. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications;Datta;IEDM Tech Dig,2005

3. Ultrahigh-speed 0.5V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate;Datta;IEEE Electron Dev Lett,2007

4. 30 nm E-mode InAs PHEMTs for THz and Future Logic Applications;Kim;Int Electron Dev Meet (IEDM),2008

5. Carrier transport in high-mobility III–V quantum-well transistors and performance impact for high-speed low-power logic applications;Dewey;IEEE Electron Dev Lett,2008

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