Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field-Reference-Cited by-同舟云学术

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Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

Published:2018-05 Issue: Volume:143 Page:90-96
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Damianos D.,Vitrant G.,Lei M.,Changala J.,Kaminski-Cachopo A.,Blanc-Pelissier D.,Cristoloveanu S.,Ionica I.

Funder

Region Rhône Alpes

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. ITRS; 2013, http://www.itrs2.net/2013-itrs.html.

2. Nonlinear optics;Boyd,2008

3. Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation

4. Second Harmonic Generation for Noninvasive Metrology of Silicon-on-Insulator Wafers

5. Second harmonic generation for contactless non-destructive characterization of silicon on insulator wafers

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1. The study of interface quality in HfO₂/Si films probed by second harmonic generation;Journal of Physics D: Applied Physics;2024-07-22

2. The Evaluation of Interface Quality in HfO2 Films Probed by Time-Dependent Second-Harmonic Generation;Materials;2024-07-13

3. Second harmonic generation in centrosymmetric multilayered structures: Theoretical approach for nonlinear boundary conditions;Journal of Applied Physics;2023-08-28

4. Modeling optical second harmonic generation for oxide/semiconductor interface characterization;Solid-State Electronics;2023-01

5. The pseudo-MOSFET;Fully Depleted Silicon-On-insulator;2021

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