Second harmonic generation for contactless non-destructive characterization of silicon on insulator wafers-Reference-Cited by-同舟云学术

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Second harmonic generation for contactless non-destructive characterization of silicon on insulator wafers

Published:2016-01 Issue: Volume:115 Page:237-243
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Damianos D.,Pirro L.,Soylu G.,Ionica I.,Nguyen V.,Vitrant G.,Kaminski A.,Blanc-Pelissier D.,Onestas L.,Changala J.,Kryger M.,Cristoloveanu S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. http://www.itrs.net/Links/2013ITRS/Home2013.htm, 2013.

2. Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation;Jun;Appl Phys Lett,2004

3. Second harmonic generation probing of dopant type and density at the Si/SiO2 interface;Fiore;Appl Phys Lett,2011

4. Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation;Park;Phys Status Solidi B,2010

5. Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers;Alles;Semicond Manuf, IEEE Trans,2007

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field;Solid-State Electronics;2018-05

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