Author:
Gimenez Salvador Pinillos
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. FinFETs and others multi-gate transistors;Colinge,2008
2. Gimenez SP, Ferreira RMG, Martino JA. Early voltage behavior in circular gate SOI nMOSFET using 0.13μm partially-depleted SOI CMOS technology. 2006 Microelectronics technology and devices (SBMicro 2006). Brazil: ECS Transactions; August 28–September 1, 2007.
3. Analog performance and application of graded-channel fully-depleted SOI MOSFETs;Pavanello;Solid-State Electron,2000
4. Dantas LP and Gimenez SP. Comparison between harmonic distortion in circular gate and conventional SOI nMOSFET using 0.13 um partially-depleted SOI CMOS technology. In: Proceedings of 215th ECS meeting, E9-SOI device technology 14, analytical and diagnostic techniques for semiconductor materials, devices, and processes 7 (plus analytical techniques for semiconductor materials and process characterization 5), vol. 11. USA: ECS Transactions; 2007. p. 1086–95.
5. Gimenez SP, Bellodi M. Patent Brazil 018080049797.
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39 articles.
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