Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation

Author:

Pelcastre Ortega Carlos AlfredoORCID,Linares Aranda Mónico

Funder

Consejo Nacional de Humanidades, Ciencias y Tecnologías

Publisher

Elsevier BV

Reference30 articles.

1. Standby power consumption estimation by interacting leakage current mechanisms in nanoscaled CMOS digital circuits;Butzen;Microelectron. J.,2010

2. Total dose radiation hardening of MOS transistors by fluorine implantation;Shaw,2017

3. Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation;Huang;Microelectron. Reliab.,2016

4. New radiation-hardened design of a CMOS instrumentation amplifier and its tolerant characteristic analysis;Lee;Electronics,2020

5. Design for high reliability of CMOS IC with tolerance on total ionizing dose effect;Lee;IEEE Trans. Device Mater. Reliab.,2020

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