Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes-Reference-Cited by-同舟云学术

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Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes

Published:2012-07 Issue: Volume:73 Page:15-20
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Blanco-Filgueira B.,López P.,Roldán Juan B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. CMOS image sensors: state-of-the-art;Theuwissen;Solid-State Electron,2008

2. Technology and device scaling considerations for CMOS imagers;Wong;IEEE Trans Electron Dev,1996

3. Which photodiode to use: a comparison of CMOS-compatible structures;Murari;IEEE Sens J,2009

4. Sensitivity of CMOS based imagers and scaling perspectives;Lulé;IEEE Trans Electron Dev,2000

5. Blanco-Filgueira B, Lopez P, Cabello D, Ernst J, Neubauer H, Hauer J. Bottom collection of photodiode-based CMOS APS. In: International conference on advanced semiconductor devices and microsystems; 2008. p. 67–70.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact/SPICE Modeling;Springer Handbook of Semiconductor Devices;2022-11-11

2. Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array;Applied Optics;2021-10-21

3. On the Thermal Models for Resistive Random Access Memory Circuit Simulation;Nanomaterials;2021-05-11

4. A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse;IEEE Transactions on Electron Devices;2016-01

5. Analytical Model for Crosstalk in p-nwell Photodiodes;IEEE Transactions on Electron Devices;2015-02

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