Analytical Model for Crosstalk in p-nwell Photodiodes-Reference-Cited by-同舟云学术

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Analytical Model for Crosstalk in p-nwell Photodiodes

Published:2015-02 Issue:2 Volume:62 Page:580-586
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Blanco-Filgueira Beatriz¹,Martinez Paula Lopez¹,Aranda Juan Bautista Roldan²,Hauer Johann³

Affiliation:

1. Centro de Investigación en Tecnologías de la Información, University of Santiago de Compostela, Santiago de Compostela, Spain

2. Department of Electronics and Computer Technology, University of Granada, Granada, Spain

3. Department of IC Design-Analog Systems, Fraunhofer Institute for Integrated Circuits IIS, Erlangen, Germany

Funder

Spanish Government through the European Region Development Fund

Xunta de Galicia through ERDF

Junta de Andalucía

Agrupación Estratéxica Centro de Investigación en Tecnologías de la Información through the Xunta de Galicia within ERDF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7015642/06981941.pdf?arnumber=6981941

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Deep Trench Isolation Shape and Microlens Radius of Curvature on Optical and Electrical crosstalk in Backside Illuminated CMOS Image Sensors;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

2. Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array;Applied Optics;2021-10-21

3. Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices;IEEE Journal of the Electron Devices Society;2020

4. Time-dependent crosstalk effects for image sensors with different isolation structures;Chinese Physics B;2018-08

5. A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse;IEEE Transactions on Electron Devices;2016-01

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