Impact of substrate resistivity on spiral inductors at mm-wave frequencies-Reference-Cited by-同舟云学术

Impact of substrate resistivity on spiral inductors at mm-wave frequencies

Published:2022-08 Issue: Volume:194 Page:108377
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nyssens Lucas^ORCID,Rack Martin,Schwan Christoph,Zhao Zhixing,Lehmann Steffen,Hermann Tom,Allibert Frederic,Aulnette Cécile,Lederer Dimitri,Raskin Jean-Pierre

Funder

FNRS

Innoviris

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications;Rack;IEEE Electron Dev Lett,2019

5. Post-process local porous silicon integration method for RF application;Scheen,2019

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2. High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies;Solid-State Electronics;2023-07

3. PN Junctions Interface Passivation in 22 nm FDSOI for Low-Loss Passives;2022 24th International Microwave and Radar Conference (MIKON);2022-09-12