Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation-Reference-Cited by-同舟云学术

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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Published:2015-11 Issue: Volume:113 Page:9-14
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Marino F.A.,Bisi D.,Meneghini M.,Verzellesi G.,Zanoni E.,Van Hove M.,You S.,Decoutere S.,Marcon D.,Stoffels S.,Ronchi N.,Meneghesso G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. On-state breakdown in power HEMTs: measurements and modeling;Somerville;IEEE Trans Electron Dev,1999

2. Punchthrough in short-channel AlGaN/GaN HFETs;Uren;IEEE Trans Electron Dev,2006

3. AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs);Bahat-Treidel;IEEE Trans Electron Dev,2010

4. Breakdown mechanisms in AlGaN/GaN HEMTs: an overview;Meneghesso;Japan J Appl Phys,2014

5. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors;Tan;Appl Phys Lett,2002

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10

2. Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111);Journal of Applied Physics;2020-06-07

3. Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs;Journal of Semiconductors;2018-09

4. Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers;Journal of Applied Physics;2018-08-07

5. Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics;Journal of Materials Research;2017-09-26

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