Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics
Author:
Abstract
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference66 articles.
1. Ultra-thin oxide reliability for ULSI applications
2. Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
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