Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Published:2018-09 Issue:9 Volume:39 Page:094003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Zhao Jie,Xing Yanhui,Fu Kai,Zhang Peipei,Song Liang,Chen Fu,Yang Taotao,Deng Xuguang,Zhang Sen,Zhang Baoshun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/39/i=9/a=094003/pdf

Reference19 articles.

1. GaN transistors on Si for switching and high-frequency applications

2. High performance AlGaN/GaN HEMTs with AlN/SiNxpassivation

3. Insulated gate and surface passivation structures for GaN-based power transistors

4. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

5. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing Back Barrier Material Composition and Thickness of Al_0.15Ga_0.85N/GaN/Al_xGa_1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications;2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE);2024-02-22

2. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□);Crystals;2023-09-30

3. Modeling of novel RF AlGaN/GaN HEMTs with the structure of n-Si drain extension;Micro and Nanostructures;2023-02

4. Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier;Computers & Electrical Engineering;2022-03

5. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range;Materials;2022-01-15

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