Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid-Reference-Cited by-同舟云学术

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Published:2016-07-25 Issue:8 Volume:9 Page:084102
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Zhang Zhili,Qin Shuangjiao,Fu Kai,Yu Guohao,Li Weiyi,Zhang Xiaodong,Sun Shichuang,Song Liang,Li Shuiming,Hao Ronghui,Fan Yaming,Sun Qian,Pan Gebo,Cai Yong,Zhang Baoshun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=8/a=084102/pdf

Reference18 articles.

1. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

2. O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

3. Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si₃N₄ Gate Dielectric and Standard Fluorine Ion Implantation

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques;Applied Physics Express;2023-09-01

2. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01

3. Implementation of Recessed Gate Normally off GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors by Electrodeless Photoelectrochemical Etching;ACS Applied Electronic Materials;2022-02-10

4. In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr;Physical Review Research;2021-09-16

5. Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs);Journal of Applied Physics;2021-07-14