Author:
Mizutani Takuya,Nakatsuka Osamu,Sakai Akira,Kondo Hiroki,Ogawa Masaki,Zaima Shigeaki
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies
2. Weber O, Irisawa T, Numata T, Harada M, Taoka N, Yamashita Y, et al. In: Proc of IEDM; 2007. p. 719–22.
3. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
4. Tensile strained epitaxial Ge films on Si(100) substrates with potential application inL-band telecommunications
5. Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)
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