Bipolar resistive switching of chromium oxide for resistive random access memory-Reference-Cited by-同舟云学术

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Bipolar resistive switching of chromium oxide for resistive random access memory

Published:2011-08 Issue:1 Volume:62 Page:40-43
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chen Shih-Cheng,Chang Ting-Chang,Chen Shih-Yang,Chen Chi-Wen,Chen Shih-Ching,Sze S.M.,Tsai Ming-Jinn,Kao Ming-Jer,Yeh Fon-Shan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Limits on Silicon Nanoelectronics for Terascale Integration

2. Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation

3. Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer

4. Spin flop switching for magnetic random access memory

5. Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

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3. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing;Discover Nano;2023-03-09

4. Oxide Memristors for Brain-inspired Computing;Journal of Inorganic Materials;2023

5. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications;Journal of Materials Chemistry C;2021

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