Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2771064
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4. Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition
5. Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
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