Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors-Reference-Cited by-同舟云学术

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Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Published:2015-09 Issue: Volume:111 Page:153-160
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bak Jun Yong,Kim So-Jung,Byun Chun-Won,Pi Jae-Eun,Ryu Min-Ki,Hwang Chi Sun,Yoon Sung-Min

Funder

National Research Foundation of Korea

Korean government (MEST)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors;Kang;Appl Phys Lett,2011

2. Nanofloating gate memory devices based on controlled metallic nanoparticle-embedded InGaZnO TFTs;Park;IEEE Electron Dev Lett,2010

3. Nanocrystal floating gate memory with solution-processed indium-zinc-tin-oxide channel and colloidal silver nanocrystals;Hu;Semicond Sci Technol,2011

4. High-performance light-erasable memory and real-time ultraviolet detector based on unannealed indium–gallium–zinc-oxide thin-film transistor;Chen;IEEE Electron Dev Lett,2012

5. SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors;Kim;Appl Phys Lett,2011

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2. Consistent Performance ZnO TFT Based Single Transistor Nonvolatile Memory with Minimal Charge Loss;Transactions on Electrical and Electronic Materials;2024-02-24

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4. Mechanically Flexible Nonvolatile Memory Thin‐Film Transistors Using Oxide Semiconductor Active Channels on Ultrathin Polyimide Films;Amorphous Oxide Semiconductors;2022-05-20

5. Synergic Impacts of CF₄ Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO₂ Charge Trap and In–Ga–Zn–O Active Channel Layers;ACS Applied Electronic Materials;2022-03-07

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