Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure-Reference-Cited by-同舟云学术

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Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure

Published:2016-12 Issue: Volume:126 Page:32-35
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang Wen,Yu Xinxin,Zhou Jianjun,Chen Dunjun,Zhang Kai,Kong Cen,Lu Haiyan,Kong Yuechan,Li Zhonghui,Chen Tangsheng

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program of China (863 Program)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Electrical and photoelectronic properties of hexagonal GaN;Seitz;Phys Status Solidi A,1999

2. GaN HEMTs and MMICs for space applications;Waltereit;Semicond Sci Technol,2013

3. GaN-based RF power devices and amplifiers;Mishra;Proc IEEE,2008

4. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444GHz;Tang;IEEE Electron Device Lett,2015

5. Impact of parasitic capacitor to the GaN HEMT devices;Chen;Appl Mech Mater,2015

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machining technologies and structural models of microfluidic devices;Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science;2024-03-23

2. Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance;Physica Scripta;2021-12-01

3. Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate;Solid-State Electronics;2017-08

4. Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment;Applied Physics Express;2017-04-12

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