Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate-Reference-Cited by-同舟云学术

Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate

Published:2017-08 Issue: Volume:134 Page:39-45
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Zhili,Song Liang,Li Weiyi,Fu Kai,Yu Guohao,Zhang Xiaodong,Fan Yaming,Deng Xuguang,Li Shuiming,Sun Shichuang,Li Xiajun,Yuan Jie,Sun Qian,Dong Zhihua,Cai Yong,Zhang Baoshun

Funder

Key Technologies Support Program of Jiangsu Province

National Natural Science Foundation of China

The National Key Research and Development Program of China

Key Research and Development Program of Jiangsu Province

National Key Scientific Instrument and Equipment Development Projects of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High performance AlGaN/GaN HEMTs with AlN/SiNxpassivation;Tan;J Semicond,2015

2. Taube A, Kaczmarski J, Kruszka R, Grochowski J, Kosiel K, Golaszewska-Malec K, et al. Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts. Solid·State Electron 2015;111: 12–7.

3. Wang W, Yu XX, Zhou JJ, Chen DJ, Zhang K, Kong C, et al. Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure. Solid·State Electron 2016;126: 32–5.

4. Buffer thickness contribution to suppress vertical leakage current with high breakdown field (2.3 MV/cm) for GaN on Si;Rowena;IEEE Electron Dev Lett,2011

5. Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal;Srivastava;IEEE Electron Dev Lett,2011

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric;Electronics;2022-03-13

2. Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs;IEEE Transactions on Electron Devices;2020-12

3. Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures;Science China Physics, Mechanics & Astronomy;2018-10-22

4. Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method;Solid State Communications;2018-02