Author:
de Oliveira Bergamim Luis Felipe,Parvais Bertrand,Simoen Eddy,Caño de Andrade Maria Glória
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Thome F. et al., A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells. In IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA, 2017, pp. 1695-1698. doi: 10.1109/MWSYM.2017.8058967.
2. 2DEG modulation in double quantum well enhancement mode nitride HEMT;Bag;Physica E,2015
3. Vimala P. et al., High electron mobility transistor-a review on analytical models. In International Journal for Innovative Research in Science & Technology, Out. 2016.
4. Aadit MNA. et al., High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications. In Different Types of Field-Effect Transistors-Theory and Applications chap. 3, Jun. 2017. doi: 10.5772/67796.
5. Gladith NA et al., DC, RF, and noise figure analysis of p+ In0.2 Ga0.8N cap gate AlGaN DH-HEMT. In Devices for Integrated Circuit (DevIC), Kalyani, 2017, pp. 708-710. doi: 10.1109/DEVIC.2017.8074042.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献