2DEG modulation in double quantum well enhancement mode nitride HEMT

Author:

Bag Ankush,Das Palash,Kumar Rahul,Mukhopadhyay Partha,Majumdar Shubhankar,Kabi Sanjib,Biswas Dhrubes

Funder

Department of Science and Technology

Department of Electronics and Information Technology

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Polarization Effects in Semiconductors: From Ab Initio Theory to Device Application;Wood,2007

2. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment;Cai;IEEE Electron Device Lett.,2005

3. Threshold voltage control in Al0.72Ga0.28 N/AlN/GaN HEMTs by work-function engineering;Li;IEEE Electron Device Lett.,2010

4. Tri-gate normally-off power MISFET;Lu;IEEE Electron Device Lett.,2012

5. High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate;Kumar;Electron. Lett.,2003

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