Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET-Reference-Cited by-同舟云学术

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Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET

Published:2017-09 Issue: Volume:135 Page:1-7
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ioannidis E.G.,Rohracher K.^ORCID,Roger F.,Pflanzl W.C.,Leisenberger F.P.,Wachmann E.,Seebacher E.,Vescoli V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. McWhorter AL. Semiconductor surface physics. H. Kingston, Ed. Philadelphia, PA, USA: Univ. Pennsylvania Press; 1957. p. 207.

2. Noise as a diagnostic tool for semiconductor material and device characterization;Claeys;J Electrochem Soc,1998

3. 1/ f noise is no surface effect;Hooge;Phys Lett,1969

4. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors;Hung;IEEE Trans Electron Dev,1990

5. Improved analysis of low frequency noise in field-effect MOS transistors;Ghibaudo;Phys Status Solidi A,1991

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. State-of-the-art low frequency noise performance of n-MOSFET for analog/RF applications;Solid-State Electronics;2020-05

2. Low frequency noise investigation of n-MOSFET single cells for memory applications;Solid-State Electronics;2019-01

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