High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology-Reference-Cited by-同舟云学术

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High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

Published:2017-09 Issue: Volume:135 Page:65-70
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tian Ye,Zetterling Carl-Mikael^ORCID

Funder

Swedish Foundation for Strategic Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. High-temperature electronics – a role for wide bandgap semiconductors?;Neudeck;Proc IEEE,2002

2. 6H-SiC JFETs for 450°C differential sensing applications;Patil;J Microelectromech Syst,2009

3. Vert A, et al. Silicon carbide high temperature operational amplifier. In: Additional conferences (Device Packaging, HiTEC, HiTEN, & CICMT) 2012 (HITEC); 2012. p. 000378–83. doi:http://dx.doi.org/10.4071/HITEC-THP12.

4. Kashyap AS, et al. Silicon Carbide integrated circuits for extreme environments. In: The 1st IEEE workshop on wide bandgap power devices and applications; 2013. p. 60–3. doi:http://dx.doi.org/10.1109/WiPDA.2013.6695562.

5. Silicon carbide integrated circuits with stable operation over a wide temperature range;Ghandi;IEEE Electron Device Lett,2014

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3. A 60-MHz Silicon Carbide Voltage-Controlled Oscillator for Extreme Temperature Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01

4. Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications;IEEE Transactions on Electron Devices;2022-08

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