Silicon Carbide High Temperature Operational Amplifier

Abstract

Development of silicon carbide operational amplifier offers an attractive alternative building block for the replacement of silicon and silicon-on-insulator analog circuits in harsh environment applications. NMOS-based enhancement mode silicon carbide device technology was utilized to demonstrate feasibility of operational amplifiers for use in harsh environment applications. This study reports on the results of characterization of operational amplifiers at room temperature and high temperatures up to 350°C. The development of high temperature packaging techniques enabled assembly of a functional oscillator board tested up to 350°C. A test fixture with high temperature sockets enabling quick swap of operational amplifiers is also discussed as an important tool in high temperature electronics research and development.