Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling;Turuvekere;IEEE Trans Electron Dev,2013
2. Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs;Ghosh;IEEE Trans Electron Dev,2015
3. Wide bandgap compound semiconductors for superior high voltage unipolar power devices;Chow;IEEE Trans Electron Dev,1994
4. Is self-heating responsible for the current collapse in GaN HEMTs?;Padmanabhan;J Comput Electron,2012
5. Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states;Goyal;Appl Phys Lett,2014
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1. Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate;Chinese Physics B;2023-02-01
2. Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04
3. A New Charge-Based Analytical Model for the Gate Current in GaN HEMTs;IEEE Transactions on Electron Devices;2022-04
4. Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs;Materials Science in Semiconductor Processing;2022-01
5. Gate Current Partitioning Model for Schottky Gate GaN HEMTs;IEEE Transactions on Electron Devices;2021-01
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