Enhanced light extraction efficiency by surface lattice arrays using blue InGaN/GaN multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Light-emitting diode extraction efficiency;Boroditsky;Proc SPIE,1997
2. Luminescence of an InGaN/GaN multiple quantum well light-emitting diode;Sheu;Solid State Electron,2000
3. Geometrical and structural crystallography;Smith,1982
4. Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate;Lee;Opt Express,2007
5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening;Fujii;Appl Phys Lett,2004
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