Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas

Author:

Lucci Luca,Palestri Pierpaolo,Esseni David,Selmi Luca

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance and threshold voltage of ultrathin body SOI MOSFETs;Uchida;IEEE IEDM Tech Dig,2001

2. Low field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep sub-micron technology application;Esseni;IEEE Trans Electron Dev,2001

3. An experimental study of mobility enhancement in ultra-thin SOI transistors operated in double-gate mode;Esseni;IEEE Trans Electron Dev,2003

4. Device physics at the scaling limit: what matters;Lundstrom;IEEE IEDM Tech Dig,2003

5. A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs;Palestri;IEEE IEDM Tech Dig,2004

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