Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects-Reference-Cited by-同舟云学术

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Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects

Published:2015-08-10 Issue:6 Volume:107 Page:063103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Jing¹^ORCID,Mugny Gabriel²³⁴,Niquet Yann-Michel¹,Delerue Christophe⁴^ORCID

Affiliation:

1. Univ. Grenoble Alpes, INAC-SP2M, L_Sim, Grenoble, France and CEA, INAC-SP2M, L_Sim, Grenoble, France

2. STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France

3. CEA, LETI-MINATEC, 38000 Grenoble, France

4. IEMN—Dept. ISEN, UMR CNRS 8520, Lille, France

Funder

Agence Nationale de la Recherche (French National Research Agency)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928525

Reference25 articles.

1. A review of some charge transport properties of silicon

2. Bulk hot-electron properties of cubic semiconductors

3. Small-Diameter Silicon Nanowire Surfaces

4. Controlled Growth and Structures of Molecular-Scale Silicon Nanowires

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation;Journal of Physics: Conference Series;2017-06

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