Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections-Reference-Cited by-同舟云学术

Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

Published:2007-11 Issue:11-12 Volume:51 Page:1558-1564
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Riolino I.,Braccioli M.,Lucci L.,Palestri P.,Esseni D.,Fiegna C.,Selmi L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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4. A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation;Winstead;IEEE Trans Electron Devices,2003

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