Author:
Sang Ling,Xia Jinghua,Jin Rui,Wang Yaohua,Zha Yiying,Yang Fei,Wu Junmin
Funder
National Key Research and Development Program of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Ion implantation technology for silicon carbide;Hallén;Surf Coat Technol,2016
2. Monte Carlo simulation of ion implantation in crystalline SiC;Albertazzi;Nucl Instrum Methods Phys Res B, Beam Interact Mater At,1996
3. Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect;Morvan;Mater Sci Eng, B,1997
4. Ster A, Posselt M, Hallén A, Janson M, Atomistic simulation of ion implantation into different polytypes of SiC, in Proc. Int. Conf. Ion Implantation Technol., Alpbach, Austria, Sep. 2000;17–22:220–223.
5. Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals;Leung;J Appl Phys,2003
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献