Author:
Sharma Deepak K.,Khosla Robin,Sharma Satinder K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. International Technology Roadmap for Semiconductor (ITRS). , 2013.
2. A model for the C–V characteristics of the metal–ferroelectric–insulator–semiconductor structure;Zhang;Solid-State Electron,2009
3. Structural and electrical properties of metal–ferroelectric–insulator–semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure;Tang;Solid-State Electron,2007
4. Summerfelt S, Dev ST. Texas instruments, dallas “embedded ferroelectric memory using a 130-nm 5 metal layer Cu/FSG logic process. In: Fifth annual non-volatile memory technology symposium. Orlando (FL, USA), paper E-4, 2004.
5. Wong OY, Wong H, Tam WS, Kok CW. An overview of charge pumping circuits for flash memory applications. In: IEEE 9th international conference on ASIC (ASICON), 2011. p. 116–9.
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献