Author:
Kruppa W.,Boos J.B.,Bennett B.R.,Tinkham B.P.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. AlSb/InAs HEMTs for low-voltage, high-speed applications;Boos;IEEE Trans. Electron. Devices,1998
2. 0.1 μm AlSb/InAs HEMTs with InAs subchannel;Boos;Electron. Lett,1998
3. Tsai R, Barski M, Boos JB, Bennett BR, Lee, J, Papanicolaou NA, et al. Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics. IEEE GaAs IC Symposium Digest 2003 (IEEE Cat. No. 03CH37445). p. 294–7
4. Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment;Yang;J. Appl. Phys,2000
5. Microwave noise characteristics of AlSb/InAs HEMTs;Kruppa;Electron. Lett,1997
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献