Spatial localization of 1/f noise sources in AlSb/InAs high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3194312
Reference31 articles.
1. AlSb/InAs HEMT's for low-voltage, high-speed applications
2. Antimonide-based compound semiconductors for electronic devices: A review
3. InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers
4. Low-power W-band CPWG InAs/AlSb HEMT low-noise amplifier
5. A W-band InAs/AlSb low-noise/low-power amplifier
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Charge-Based Flicker Noise Model for HEMTs;IEEE Microwave and Wireless Components Letters;2021
2. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors;Applied Physics Letters;2013-07-15
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