Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs

Author:

Shin Seung Heon,Kim Tae-Woo,Song Jong-In,Jang Jae-Hyung

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. 30-nm InAs PHEMTs With fT=644GHz and fmax=681GHz;Kim;IEEE Electron Dev Lett,2010

2. 610 GHz InAlAs/In0.75GaAs metamorphic HEMT with an ultra-short 15nm gate;Yeon;IEDM Tech Dig,2007

3. Sub 50nm InP HEMT with Fmax Greater than 1THz;Lai;IEDM Tech Dig,2007

4. Chao PC, Tessmer AJ, Duh Kuang-Hann G, Ho Pin, Kao Ming-Yih, Smith Phillip M, et al. W-band low-noise InAlAs/InGaAs lattice-matched HEMT’s. IEEE Electron Dev Lett 1990;11:59–62.

5. 50-nm T-gate Metamorphic GaAs HEMTs with fT of 440GHz and Noise Figure of 0.7dB at 26GHz;Elgaid;IEEE Electron Dev Lett,2005

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