Characterization of charge trapping phenomena at III–N/dielectric interfaces-Reference-Cited by-同舟云学术

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Characterization of charge trapping phenomena at III–N/dielectric interfaces

Published:2016-11 Issue: Volume:125 Page:142-153
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Stradiotto Roberta,Pobegen Gregor,Ostermaier Clemens,Grasser Tibor

Funder

Austrian Research Promotion Agency

Carinthian Economic Promotion Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Reliability of GaN HEMT: state-of-the-art and perspectives;Meneghesso;Trans Device Mater Reliab,2008

2. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes;Arehart;J Appl Phys,2011

3. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: effect of carbon concentration in GaN buffer;Fang;J Appl Phys,2010

4. A current-transient methodology for trap analysis for GaN high electron mobility transistors;Joh;Trans Electron Dev,2011

5. Capacitance-voltage characteristics of Al2O3/AlGaN/GaN structures and states density distribution at Al2O3/AlGaN interface;Mizue;Japanese J Appl Phys,2011

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot electron effects in AlGaN/GaN HEMTs during hard-switching events;Microelectronics Reliability;2021-11

2. Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlxGa1-xN surface donor modification by fluorination;Journal of Applied Physics;2017-06-14

3. Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs;IEEE Transactions on Electron Devices;2017-03

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