Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3592284
Reference61 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors
3. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
4. Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
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