Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Author:

Jha S.K.,Surya C.,Chen K.J.,Lau K.M.,Jelencovic E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. GaN microwave electronics;Mishra;IEEE Trans Microwave Theory Tech,1998

2. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Device Lett,2004

3. A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive N-SiC substrate for wireless base station applications;Kanamura,2004

4. High-gain microwave GaN HEMTs with source-terminated field-plates;Wu,2004

5. AlGaN/GaN high electron mobility transistors with InGaN back-barriers;Palacios;IEEE Electron Device Lett,2006

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1. Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT;AIP Advances;2024-03-01

2. Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications;Micro and Nanostructures;2023-10

4. Low Frequency Noise Analysis in AlGaN/GaN HEMTs;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01

5. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state;Applied Physics Letters;2023-08-28

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