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Comprehensive predictive modeling of resistive switching devices using a bias-dependent window function approach

  • Published:2020-08 Issue: Volume:170 Page:107833
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Fernandez Carlos,Gomez Jorge,Ortiz Javier,Vourkas Ioannis

Funder

ANID FONDECYT INICIACION

ANID BASAL

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Memristor – the missing circuit element;Chua;IEEE Trans Circuit Theory,1971

2. The missing memristor found;Strukov;Nature,2008

3. Multibit memory operation of metal-oxide bi-layer memristors;Stathopoulos;Sci Rep,2017

4. Resistive RAM-centric computing: design and modeling methodology;Li;IEEE Trans Circuits Syst I, Reg Papers, Sep,2017

5. Thermodynamic-RAM technology stack;Nugent;Int J Parallel, Emergent Distrib Syst,2018

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1. The probabilistic behavior of the set and reset thresholds in Knowm's SDC memristors: Characterization and Simulation;IEEE Latin America Transactions;2023-12

2. The Dynamic Tunability of Memristor-Based Active Filters;Micromachines;2023-11-05

3. RevI-Ve: A Comprehensive Software Interface for Easy ReRAM Device Characterization;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28

4. A Comprehensive Simulation Framework to Validate Progressive Read-Monitored Write Schemes for ReRAM;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06

5. The Emergence of Memristive Devices in Microwave Circuits: A Review of Progress and Potential Application;2023 10th International Conference on Electrical, Electronic and Computing Engineering (IcETRAN);2023-06-05
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