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Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films

  • Published:2015-10 Issue: Volume:112 Page:46-50
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Osintsev Dmitri,Sverdlov Viktor,Selberherr Siegfried

Funder

European Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Strain-induced effects in advanced MOSFETs;Sverdlov,2011

2. Spin transistor electronics: an overview and outlook;Sugahara;Proc IEEE,2010

3. Electronic analog of the electro-optic modulator;Datta;Appl Phys Lett,1990

4. Silicon spintronics;Jansen;Nat Mater,2012

5. Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation;Li;Phys Rev B,2011

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1. Spin-Based Devices for Digital Applications;Springer Handbook of Semiconductor Devices;2022-11-11

2. A review of quantum transport in field-effect transistors;Semiconductor Science and Technology;2021-12-16

3. Conditions for the identical distribution of free carriers in thin films;Journal of Physics D: Applied Physics;2021-11-03

4. Suppressing the spin relaxation of electrons in silicon;Physical Review B;2017-01-17

5. Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress;Journal of Nano Research;2016-02
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